Optical models for cavity profiles in high-dose helium-implanted and annealed silicon measured by ellipsometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1937469
Reference21 articles.
1. Gettering on Cavities Induced by Helium Implantation in Si: The Case of Boron
2. Gettering by helium implantation applied to a device: impact of metal and dopant segregation
3. A simple model for boron trapping by He implantation extended defects in Si: the role of boron diffusivity
4. Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon
5. Voids in Silicon by He Implantation: From Basic to Applications
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