Oxide interfacial phases and the electrical properties of SrBi2Ta2O9 thin films prepared by plasma-enhanced metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121059
Reference10 articles.
1. Ferroelectric Memories
2. An experimental 512-bit nonvolatile memory with ferroelectric storage cell
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4. Recent results on switching, fatigue and electrical characterization of sol-gel based PZT capacitors
5. Preparation and ferroelectric properties of SrBi2Ta2O9 thin films
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