Interface charge relaxation in ZnS:Mn based alternating-current thin-film electroluminescent devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368958
Reference13 articles.
1. Physical Concepts of High-Field, Thin-Film Electroluminescence Devices
2. Basics of Electron-Impact-Excited Luminescence Devices)
3. Memory in thin-film electroluminescent devices
4. Charge transfer in ZnS‐type electroluminescence
5. Electron multiplication in ZnS‐type electroluminescent devices
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1. Metal–insulator–semiconductor–insulator–metal structured titanium dioxide ultraviolet photodetector;Journal of Physics D: Applied Physics;2010-01-12
2. Effect of carrier trapping time on performance of alternating-current thin-film electroluminescent devices;Journal of Applied Physics;2001-09
3. Growth, characterization and modeling of alternating-current thin-film electroluminescent devices;Progress in Crystal Growth and Characterization of Materials;2001-01
4. Synthesis and characterization of some ZnS-based thin film phosphors for electroluminescent device applications;Thin Solid Films;2000-04
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