Memory in thin-film electroluminescent devices-Reference-Cited by-同舟云学术

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Memory in thin-film electroluminescent devices

Published:1981-07 Issue:1-2 Volume:23 Page:155-173
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Howard W.E.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference32 articles.

1. Digest 1974 Int. Elect. Dev. Mtg.;Yamauchi,1974

2. Proc. 6th Conf. Sol. State Devices;Takeda,1975

3. Digest 1974 S.I.D. Int. Symp.;Inoguchi,1974

4. Electroluminescent Thin Film Research;Soxman;JANAIR Report 720903,1972

5. Digest 1974 S.I.D. Int. Symp.;Mito,1974

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Large grain electroluminescent ZnS:Mn thin films grown by quasi-rheotaxy on insulating materials;Thin Solid Films;2001-03

2. Growth, characterization and modeling of alternating-current thin-film electroluminescent devices;Progress in Crystal Growth and Characterization of Materials;2001-01

3. Energy levels of defects in electroluminescent ZnS:Mn thin films exhibiting hysteresis and self-organized patterns;Journal of Crystal Growth;2000-06

4. On nature of centers responsible for inherent memory in ZnS : Mn thin-film electroluminescent devices;Journal of Crystal Growth;2000-06

5. Chapter 3 Materials in Thin Film Electroluminescent Devices;Electroluminescence II;1999

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