High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAs1−xSbx superlattice photodetector by MOCVD
Author:
Affiliation:
1. Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0005326
Reference33 articles.
1. A new semiconductor superlattice
2. Advances in mid-infrared detection and imaging: a key issues review
3. InAs/GaSb type-II superlattice infrared detectors: Future prospect
4. InAs/GaSb type II superlattices: A developing material system for third generation of IR imaging
5. Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
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