Photoluminescence study of gallium antimonide grown by liquid‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343880
Reference16 articles.
1. Auger recombination in GaAs and GaSb
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3. Three-level oscillator: a new form of transferred-electron device
4. InGaSbAs injection lasers
5. Reduction of threshold current density of 2.2μm GaInAsSb/AlGaAsSb injection lasers
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