Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications-Reference-Cited by-同舟云学术

Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications

Published:2012-06-04 Issue:23 Volume:100 Page:233506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Misra Abhishek,Waikar Mayur,Gour Amit,Kalita Hemen,Khare Manali,Aslam Mohammed,Kottantharayil Anil

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4726284

Reference28 articles.

1. Chemical reaction concerns of gate metal with gate dielectric in Ta gate MOS devices: an effect of self-sealing barrier configuration interposed between Ta and SiO/sub 2/

2. Fermi Pinning-Induced Thermal Instability of Metal-Gate Work Functions

3. Issues in High-ĸ Gate Stack Interfaces

4. A Dual-Metal Gate Integration Process for CMOS With Sub-1-nm EOT<tex>$hbox HfO_2$</tex>by Using HfN Replacement Gate

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