Infrared excitation spectrum of thallium‐doped silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90343
Reference7 articles.
1. Absorption spectra of impurities in silicon—I
2. Infrared spectra of Group III acceptors in silicon
3. Spectroscopic Investigation of Group-III Acceptor States in Silicon
4. Theory of shallow acceptor states in Si and Ge
5. Thallium‐doped silicon ionization and excitation levels by infrared absorption
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2. EM Acceptor Spectra;Optical Absorption of Impurities and Defects in SemiconductingCrystals;2009
3. Prediction of dopant ionization energies in silicon: The importance of strain;Physical Review B;2003-12-30
4. The interpretation of the p3/2spectra of group III acceptors in silicon;Semiconductor Science and Technology;1992-09-01
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