The interpretation of the p3/2spectra of group III acceptors in silicon

Author:

Pajot B,Beinikhes I L,Kogan Sh M,Novak M G,Polupanov A F,Song C

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. New properties of boron-oxygen dimer defect in boron-doped Czochralski silicon;Journal of Applied Physics;2022-10-07

2. Even-parity excited states of the acceptor boron in silicon revisited;Physical Review B;2016-03-10

3. EM Acceptor Spectra;Optical Absorption of Impurities and Defects in SemiconductingCrystals;2009

4. Effective-Mass Theory and its Use;Optical Absorption of Impurities and Defects in SemiconductingCrystals;2009

5. Far-infrared absorption due to shallow acceptors in semi-insulating GaAs in dependence on EL2 bleaching;physica status solidi (b);2003-11

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