Picosecond luminescence measurements on fast GaAs Schottky diodes under changing circuit conditions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95373
Reference8 articles.
1. Electron drift velocity measurement in compositionally graded AlxGa1−xAs by time‐resolved optical picosecond reflectivity
2. Picosecond nonequilibrium carrier transport in GaAs
3. Time‐resolved measurement of hole sweepout in a GaAs photoconductor
4. Picosecond correlation effects in the hot luminescence of GaAs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ultrafast carrier dynamics at a metal‐semiconductor interface;Journal of Applied Physics;1996-12-15
2. Ultrafast carrier dynamics at a metal-semiconductor interface studied by femtosecond luminescence spectroscopy;Semiconductor Science and Technology;1994-05-01
3. Investigation of the nonlinearity in the luminescence of GaAs under high‐density picosecond photoexcitation;Journal of Applied Physics;1985-07-15
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