Ultrafast carrier dynamics at a metal-semiconductor interface studied by femtosecond luminescence spectroscopy-Reference-Cited by-同舟云学术

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Ultrafast carrier dynamics at a metal-semiconductor interface studied by femtosecond luminescence spectroscopy

Published:1994-05-01 Issue:5S Volume:9 Page:707-709
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Christianen P C M,Hall P J van,Bluyssen H J A,Wolter J H

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/9/i=5S/a=082/pdf

Reference5 articles.

1. Time resolved luminescence of photoexcitedp‐type gallium arsenide by population mixing

2. Time‐resolved measurement of hole sweepout in a GaAs photoconductor

3. Picosecond luminescence measurements on fast GaAs Schottky diodes under changing circuit conditions

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001

2. Interface states at semiconductor junctions;Reports on Progress in Physics;1999-01-01

3. Coherent plasmon—surface phonon oscillations in a GaAs Schottky barrier sample;Surface Science;1997-04

4. Time-resolved optical second harmonic generation study of the electric field dynamics at a metal-semiconductor interface;Surface Science;1996-05

5. A model for the current instabilities in GaAs‐AlGaAs heterojunction;Journal of Applied Physics;1996-02-15

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