Electrical properties of highly reliable plug buffer layer for high-density ferroelectric memory
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1467619
Reference5 articles.
1. Ferroelectric Memories
2. An experimental 512-bit nonvolatile memory with ferroelectric storage cell
3. Integration and electrical properties of diffusion barrier for high density ferroelectric memory
4. Novel capacitor process using diffusion barrier rounded by Si/sub 3/N/sub 4/ spacer for high density FRAM device
5. Thermal stability of Ir/polycrystalline-Si structure for bottom electrode of integrated ferroelectric capacitors
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2. Thermodynamic theory of intrinsic finite-size effects in PbTiO3 nanocrystals. I. Nanoparticle size-dependent tetragonal phase stability;Journal of Applied Physics;2007-03-15
3. Minimum size of 180 degree domains in ferroelectric thin films covered by electrodes;Applied Mathematics and Mechanics;2006-08
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