Electric field and stepped barrier effects on hydrogenic impurity states in semiconducting stepped quantum wells
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3672818
Reference30 articles.
1. Quantum Theory of the Optical and Electronic Properties of Semiconductors
2. Investigation of blue InGaN light-emitting diodes with step-like quantum well
3. Enhanced Performance of Nitride-Based Blue LED with Step-stage MQW Structure
4. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes
5. Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes
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1. Radiation field analysis of a photoconductive antenna using an improved carrier dynamics;Semiconductor Science and Technology;2019-01-16
2. Combined effects of an intense laser field, electric field and hydrostatic pressure on donor impurity states in zinc-blende InGaN/GaN quantum dots;Journal of the Korean Physical Society;2016-07
3. Donor impurity states and related terahertz range nonlinear optical response in GaN cylindrical quantum wires: Effects of external electric and magnetic fields;Journal of Applied Physics;2014-06-07
4. External electric field and hydrostatic pressure effects on the binding energy and self-polarization of an off-center hydrogenic impurity confined in a GaAs/AlGaAs square quantum well wire;Physica B: Condensed Matter;2012-07
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