Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure-Reference-Cited by-同舟云学术

Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure

Published:2017-08 Issue:8 Volume:7 Page:085319
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Yu Q.-N.¹,Jia Y.¹,Lu W.¹,Wang M.-Q.¹,Li F.¹,Zhang J.²^ORCID,Zhang X.²,Ning Y.-Q.²,Wu J.¹^ORCID

Affiliation:

1. Department of Applied Physics, Beihang University, Beijing 100191, China

2. State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130033 Changchun, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4990630

Reference23 articles.

1. Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers

2. Enhancement of 1.5 μm emission under 980 nm resonant excitation in Er and Yb co-doped GaN epilayers

3. Design and characteristics of high-power (<0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams

4. 8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm

5. 532-nm laser sources based on intracavity frequency doubling of extended-cavity surface-emitting diode lasers

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3. Study of waveguide absorption in InGaAs ”quantum well-dots” heterostructures;Nano-Structures & Nano-Objects;2021-02

4. Wideband Anisotropic Unit Cell Design for Perfect Cross-Polarization Conversion;2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting;2019-07

5. Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs/GaAs quantum well structure;Chinese Optics Letters;2018