Temperature and field dependent low frequency noise characterization of Ge n-FETs
Author:
Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
Funder
Department of Science and Technology, Ministry of Science and Technology (DST)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4961875
Reference25 articles.
1. On the nonequilibrium statistics and small signal admittance of Si‐SiO2interface traps in the deep‐depleted gated‐diode structure
2. Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility Characterization
3. On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates
4. Improved n-channel Ge gate stack performance using HfAlO high-kdielectric for various Al concentrations
5. On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration
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1. Understanding PBTI in Replacement Metal Gate Ge n-Channel FETs With Ultrathin Al2O3 and GeOx ILs Using Ultrafast Charge Trap–Detrap Techniques;IEEE Transactions on Electron Devices;2018-10
2. Low-Frequency Noise in Supported and Suspended MoS2 Transistors;IEEE Transactions on Electron Devices;2018-10
3. PdGe contact fabrication on Ga-doped Ge: Influence of implantation-mediated defects;Scripta Materialia;2018-06
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