Microstructure characterization of amorphous thin solid films in a fringe-free environment
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369460
Reference17 articles.
1. Structural and electrical properties of plasma-deposited silicon nitride from SiH4-N2 gas mixture
2. Electrical, physical, and chemical characteristics of plasma‐assisted chemical‐vapor deposited semi‐insulatinga‐SiN:H and their use as a resistive field shield for high voltage integrated circuits
3. Quantitative analysis of the effect of disorder-induced mode coupling on infrared absorption in silica
4. Analysis of SiH and SiN vibrational absorption in amorphousSiNx:H films in terms of a charge-transfer model
5. Infrared absorption and thermal evolution study of hydrogen bonding in a‐SiH
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si:H thin films;Applied Physics Letters;2008-02-11
2. Influence of the Amorphous Silicon Thickness on Top Gate Thin-Film Transistor Electrical Performances;Japanese Journal of Applied Physics;2001-02-15
3. Interference fringe-free transmission spectroscopy of amorphous thin films;Journal of Applied Physics;2000-11-15
4. Method of collecting pure vibrational absorption spectra of amorphous thin films;Thin Solid Films;1999-07
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