Adaptation of the pseudo-metal–oxide–semiconductor field effect transistor technique to ultrathin silicon–on-insulator wafers characterization: Improved set-up, measurement procedure, parameter extraction, and modeling-Reference-Cited by-同舟云学术

Adaptation of the pseudo-metal–oxide–semiconductor field effect transistor technique to ultrathin silicon–on-insulator wafers characterization: Improved set-up, measurement procedure, parameter extraction, and modeling

Published:2013-10-28 Issue:16 Volume:114 Page:164502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Van Den Daele W.,Malaquin C.,Baumel N.,Kononchuk O.,Cristoloveanu S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4826631

Reference19 articles.

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3. Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers

4. A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications

5. Characterization of silicon-on-insulator films with pseudo-metal-oxide-semiconductor field-effect transistor: Correlation between contact pressure, crater morphology, and series resistance

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