Characterization of silicon-on-insulator films with pseudo-metal-oxide-semiconductor field-effect transistor: Correlation between contact pressure, crater morphology, and series resistance-Reference-Cited by-同舟云学术

Characterization of silicon-on-insulator films with pseudo-metal-oxide-semiconductor field-effect transistor: Correlation between contact pressure, crater morphology, and series resistance

Published:2009-01-05 Issue:1 Volume:94 Page:012111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ionica I.,Savin I.,Van Den Daele W.,Nguyen T.,Mescot X.,Cristoloveanu S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3030987

Reference7 articles.

1. Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia

2. Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers

3. A review of the pseudo-MOS transistor in SOI wafers: operation, parameter extraction, and applications

4. Si film electrical characterization in SOI substrates by the HgFET technique

5. Possible Influence of the Schottky Contacts on the Characteristics of Ultrathin SOI Pseudo-MOS Transistors

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