Invasion percolation model for abnormal time-dependent dielectric breakdown characteristic of low-k dielectrics due to massive metallic diffusion-Reference-Cited by-同舟云学术

Invasion percolation model for abnormal time-dependent dielectric breakdown characteristic of low-k dielectrics due to massive metallic diffusion

Published:2012-12-10 Issue:24 Volume:101 Page:242904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Fen,Shinosky Michael,Aitken John,Yang Chih-Chao,Edelstein Daniel

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4770318

Reference10 articles.

1. F. Chen, O. Bravo, K. Chanda, P. McLaughlin, T. Sullivan, J. Gill, J. Lloyd, E. Wu, R. Kontra, and J. Aitken, in 44th Annual IEEE Reliability Physics Symposium (IRPS, 2006), pp. 46–53.

2. Dominant Factors in TDDB Degradation of Cu Interconnects

3. Reliability of copper low-k interconnects

4. M. N. Chang, R. C. J. Wang, C. C. Chiu, and K. Wu, in 47th Annual IEEE Reliability Physics Symposium (IRPS, 2009), pp. 619–623.

5. F. Chen, K. Chanda, J. Gill, M. Angyal, J. Demarest, T. Sullivan, R. Kontra, M. Shinosky, J. Li, L. Economikos, M. Hoinkis, S. Lane, D. McHerron, M. Inohara, S. Boettcher, D. Dunn, M. Fukasawa, B. C. Zhang, K. Ida, T. Ema, G. Lembach, K. Kumar, Y. Lin, H. Maynard, K. Urata, T. Bolom, K. Inoue, J. Smith, Y. Ishikawa, M. Naujok, P. Ong, A. Sakamoto, D. Hunt, and J. Aitken, in 43th Annual IEEE Reliability Physics Symposium (IRPS, 2005), pp. 501–507.

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dielectric breakdown of oxide films in electronic devices;Nature Reviews Materials;2024-08-07

2. Impact of Metals on Silicon Devices and Circuits;Metal Impurities in Silicon- and Germanium-Based Technologies;2018

3. Atomic bonding and electrical potential at metal/oxide interfaces, a first principle study;The Journal of Chemical Physics;2017-03-28

4. TEM Investigation of Time-Dependent Dielectric Breakdown Mechanisms in Cu/Low-k Interconnects;IEEE Transactions on Device and Materials Reliability;2016-12

5. A fast two-step algorithm for invasion percolation with trapping;Computers & Geosciences;2016-05