Statistics of electrical breakdown field in HfO2 and SiO2 films from millimeter to nanometer length scales
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2822420
Reference21 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. A high performance MIM capacitor using HfO2 dielectrics
3. Review on high-k dielectrics reliability issues
4. Trends in the ultimate breakdown strength of high dielectric-constant materials
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