Thermal conversion ofn‐type GaAs:Si toptype in excess arsenic vapor
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.349196
Reference28 articles.
1. Properties of vacancy defects in GaAs single crystals
2. Annealing ofN-Type GaAs under Excess Arsenic Vapor
3. EFFECT OF ARSENIC PRESSURE ON HEAT TREATMENT OF LIQUID EPITAXIAL GaAs
4. Behavior of lattice defects in GaAs
5. Heat Treatment of Gallium Arsenide
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