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Effect of thermal annealing on electrical and photoelectrical properties of n-InSb

  • Published:2017-04-05 Issue:1 Volume:20 Page:105-109
  • ISSN:1560-8034
  • Container-title:Semiconductor Physics Quantum Electronics and Optoelectronics
  • language:
  • Short-container-title:Semicond. Phys. Quantum Electron. Optoelectron.

Author:

Stariy S.V.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recombination and Trapping of Excess Carriers in n-InSb;Ukrainian Journal of Physics;2024-02-06

2. Contactless photomagnetoelectric investigations of 2D semiconductors;Beilstein Journal of Nanotechnology;2018-10-25

3. Effect of Complexing Agents on Properties of Electrodeposited InSb Thin Films;Journal of Electronic Materials;2018-08-25

4. Band alignment at the CdTe/InSb (001) heterointerface;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2018-05

5. InSb PHOTODIODES (REVIEW. PART III);Optoèlektronika i poluprovodnikovaâ tehnika;2017-12-15
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