AlGaN-based UV-B laser diode with a high optical confinement factor-Reference-Cited by-同舟云学术

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AlGaN-based UV-B laser diode with a high optical confinement factor

Published:2021-04-19 Issue:16 Volume:118 Page:163504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tanaka Shunya¹,Ogino Yuya¹,Yamada Kazuki¹,Omori Tomoya¹,Ogura Reo¹,Teramura Shohei¹,Shimokawa Moe¹,Ishizuka Sayaka¹,Yabutani Ayumu¹,Iwayama Sho¹²,Sato Kosuke¹³^ORCID,Miyake Hideto²^ORCID,Iwaya Motoaki¹^ORCID,Takeuchi Tetsuya¹,Kamiyama Satoshi¹,Akasaki Isamu¹⁴

Affiliation:

1. Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan

2. Graduate School of Regional Innovation Studies, Mie University, Tsu 514-8507, Japan

3. Asahi-Kasei Corporation, Fuji, Shizuoka 416-8501, Japan

4. Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan

Funder

The MEXT Private University Research Branding Project

JSPS KAKENHI

JST CREST

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0046224

Reference29 articles.

1. Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping

2. Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire

3. Design and characterization of a low-optical-loss UV-C laser diode

4. A 271.8 nm deep-ultraviolet laser diode for room temperature operation

5. On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR

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1. Developing Deep Ultraviolet Laser Diode: Design and Improvement of Al0.62Ga0.38N/Al0.68Ga0.32N Quantum Wells on AlN Substrates for 266 nm DUV Emission;Optics & Laser Technology;2024-08

2. Photoluminescence Excitation Spectroscopy of Stimulated Emission from AlGaN‐Based Multiple Quantum Wells with an Emission Wavelength Around 280 nm;physica status solidi (b);2024-04-07

3. Effect of Polarization‐Charge Modulation on the Carrier‐Injection Efficiency of AlGaN‐Based Ultraviolet‐B Laser Diodes Using Polarization Doping in the p‐Type AlGaN Cladding Layer;physica status solidi (a);2024-03-25

4. Progress in efficient doping of Al-rich AlGaN;Journal of Semiconductors;2024-02-01

5. Progress and Outlook of 10% Efficient AlGaN‐Based (290–310 nm) Band UVB LEDs;physica status solidi (a);2024-01-29

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