Difference in light‐induced annealing behavior of deposition‐ and light‐induced defects in hydrogenated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110610
Reference35 articles.
1. A comprehensive defect model for amorphous silicon
2. Annealing of recombination centers in the deposition and light induced high defect amorphous silicon
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4. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
5. Reinterpretation of degradation kinetics of amorphous silicon
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1. Effects of oxygen impurity on the energy distribution of gap states in hydrogenated amorphous silicon studied by post-transit photocurrent spectroscopy;Physical Review B;2007-08-10
2. Development in Understanding and Controlling the Staebler-Wronski Effect in a-Si:H;Annual Review of Materials Research;2001-08
3. Influence of Light-Soaking Temperature on the Distribution of Thermal-Annealing Activation Energies for Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon;Japanese Journal of Applied Physics;1995-11-15
4. Influence of Light-Soaking Temperature on the Distribution of Thermal-Annealing Activation Energies for Photocreated Dangling Bonds in Hydrogenated Amorphous Silicon;Japanese Journal of Applied Physics;1995-11-01
5. Forward current transients in amorphous silicon p-i-n structures;Journal of Non-Crystalline Solids;1995-10
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