Transport properties of boron-doped crystallized amorphous Si1−xGex films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368697
Reference26 articles.
1. Deposition and device application ofinsituboron‐doped polycrystalline SiGe films grown at low temperatures
2. Polycrystalline silicon-germanium thin-film transistors
3. Effects of Ge on Material and Electrical Properties of Polycrystalline Si1 − x Ge x for Thin‐Film Transistors
4. PMOS transistors in LPCVD polycrystalline silicon-germanium films
5. Rapid thermal chemical vapor deposition ofin situboron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications
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3. Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation;Scientific Reports;2019-10-04
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