Influence of oxidation parameters on atomic roughness at the Si‐SiO2interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329221
Reference27 articles.
1. An Auger analysis of the SiO2‐Si interface
2. Studies of the effect of oxidation time and temperature on the Si‐SiO2interface using Auger sputter profiling
3. The Si/SiO2 interface examined by cross‐sectional transmission electron microscopy
4. The Si/SiO2 interface examined by cross‐sectional transmission electron microscopy
5. A high‐resolution electron microscopy study of the Si‐SiO2interface
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