Potentiality of delocalized states in indium-involved amorphous silicon oxide-Reference-Cited by-同舟云学术

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Potentiality of delocalized states in indium-involved amorphous silicon oxide

Published:2017-05-22 Issue:21 Volume:110 Page:213902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wan Y. Z.¹,Gao M.¹,Li Y.¹,Du H. W.¹,Li Y. H.¹,Guo H. B.²,Xu F.¹,Ma Z. Q.¹³

Affiliation:

1. SHU-SolarE R&D Lab, Department of Physics, Shanghai University, Shanghai 200444, China

2. School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China

3. Instrumental Analysis & Research Center, Shanghai University, Shanghai 200444, China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4983775

Reference21 articles.

1. Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO 2 layers

2. Preparation of ITO/SiOx/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

3. Initial stages of ITO/Si interface formation: In situ x-ray photoelectron spectroscopy measurements upon magnetron sputtering and atomistic modelling using density functional theory

4. Elemental distribution and oxygen deficiency of magnetron sputtered indium tin oxide films

5. Interfacial stability of an indium tin oxide thin film deposited on Si and Si0.85Ge0.15

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4. Role of Interfacial Oxide Layer in MoOx/n-Si Heterojunction Solar Cells;International Journal of Photoenergy;2021-04-22

5. Improvement of the performance of ITO/a-SiOx/n-Si device by controllable sputtering power and reducible interface states;Materials Science in Semiconductor Processing;2020-01

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