Temperature-dependent transition to progressive breakdown in thin silicon dioxide based gate dielectrics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1925316
Reference12 articles.
1. Critical reliability challenges in scaling SiO2-based dielectric to its limit
2. Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability
3. Electron transport through broken down ultra-thin SiO2 layers in MOS devices
4. Statistics of soft and hard breakdown in thin SiO2 gate oxides
5. Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics
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2. Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation;Applied Physics Letters;2015-03-02
3. A novel approach to characterization of progressive breakdown in high-k/metal gate stacks;Microelectronics Reliability;2008-11
4. Statistics of competing post-breakdown failure modes in ultrathin MOS devices;IEEE Transactions on Electron Devices;2006-02
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