Low-resistance magnetic tunnel junctions prepared by partial remote plasma oxidation of 0.9nm Al barriers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1925318
Reference9 articles.
1. Low resistance spin-dependent tunnel junctions with ZrAlO[sub x] barriers
2. Ion-beam deposited low resistance magnetic tunnel junctions prepared by a two-step oxidation process
3. MR Ratio Enhancement by NOL Current-Confined-Path Structures in CPP Spin Valves
4. Ion beam deposition and oxidation of spin-dependent tunnel junctions
5. Ferromagnetic Coupling Field Reduction in CoFeB Tunnel Junctions Deposited by Ion Beam
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1. Magnetic Tunnel Junction Based on MgO Barrier Prepared by Natural Oxidation and Direct Sputtering Deposition;Nano-Micro Letters;2012-02-28
2. Spin Transfer on Low Resistance-Area MgO-Based Magnetic Tunnel Junctions Prepared by Ion Beam Deposition;IEEE Transactions on Magnetics;2010-06
3. A nanoanalytical investigation of elemental distributions in high-k dielectric gate stacks on silicon;Microelectronic Engineering;2008-01
4. Spin-dependent migration-conduction model for ultra-thin magnetic tunnel junctions;Journal of Magnetism and Magnetic Materials;2007-09
5. Selectable resistance-area product by dilute highly charged ion irradiation;Applied Physics Letters;2007-08-13
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