Ion-beam deposited low resistance magnetic tunnel junctions prepared by a two-step oxidation process
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1558660
Reference3 articles.
1. Resistance decrease in spin tunnel junctions by control of natural oxidation conditions
2. First Principles Study of Atomic-Scale Al2O3 Films as Insulators for Magnetic Tunnel Junctions
3. PtMn-based spin-dependent tunneling materials with thin alumina barrier fabricated by two-step natural oxidation
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