Heteroepitaxy of GaSb on Si(111) and fabrication of HfO2/GaSb metal-oxide-semiconductor capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4862542
Reference26 articles.
1. Device structures and carrier transport properties of advanced CMOS using high mobility channels
2. Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance
3. Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
4. Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
5. Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces
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1. Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers;Japanese Journal of Applied Physics;2024-02-08
2. Lattice‐Mismatched Epitaxy of InAs on (111)A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots;physica status solidi (a);2024-01-10
3. Strain relaxation in InAs heteroepitaxy on lattice-mismatched substrates;Scientific Reports;2020-03-12
4. Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory;Progress in Crystal Growth and Characterization of Materials;2018-12
5. Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers;ACS Omega;2018-11-16
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