Electroluminescence from Er‐doped GaP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112985
Reference14 articles.
1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
2. Photoluminescence excitation measurements on GaAs:Er grown by molecular‐beam epitaxy
3. Energy Transfer in Rare-Earth-Doped III-V Semiconductors
4. Impact excitation of the erbium‐related 1.54 μm luminescence peak in erbium‐doped InP
5. Characteristics of the electroluminescence and photoluminescence emission of erbium ions doped in InP and the energy transfer mechanism
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1. Optical constants and near infrared emission of Er doped ZnO sol–gel thin films;Journal of Luminescence;2015-02
2. Enhancement of near infrared emission in La co-doped ZnO/Er nanoplates;Ceramics International;2014-09
3. Preparation of Li and Er codoped ZnO thin films and their photoluminescence;Thin Solid Films;2009-07
4. Decay dynamics of the green luminescence in Er3 -doped SiN alloys;Journal of Physics: Condensed Matter;2003-06-27
5. Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN;Journal of Applied Physics;2001-07
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