High‐field drift velocity of silicon inversion layers—a Monte Carlo calculation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323386
Reference19 articles.
1. Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
2. Self-Consistent Results forn-Type Si Inversion Layers
3. Effects of a Tilted Magnetic Field on a Two-Dimensional Electron Gas
4. Drift-Velocity Saturation of Holes in Si Inversion Layers
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1. Effect of finite energy of intravalley acoustic phonons on the temperature of non-equilibrium electrons in a quantum surface;Physica B: Condensed Matter;2009-11
2. Simulation of electron transport in (0001) and (112¯0) 4H-SiC inversion layers;Journal of Applied Physics;2009-09-15
3. Field-dependent mobility characteristics of a two-dimensional electron gas due to quasi-elastic interaction with intravalley acoustic phonons;Journal of Physics and Chemistry of Solids;2009-08
4. Monte Carlo calculation of the low-temperature mobility of two-dimensional electrons in a quantum well in a selectively doped GaAs-based heterostructure;Technical Physics Letters;1997-12
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