Simulation of electron transport in (0001) and (112¯0) 4H-SiC inversion layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3212970
Reference88 articles.
1. Fundamentals of Power Electronics
2. Dopant Redistribution during Thermal Oxidation of Monocrystalline Beta ‐ SiC Thin Films
3. Measurement of high-field electron transport in silicon carbide
4. Self-consistent calculations forn-type hexagonal SiC inversion layers
5. High-voltage accumulation-layer UMOSFET's in 4H-SiC
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1. Wannier–Stark localization of electronic states in 4H-SiC MOS inversion layer;Japanese Journal of Applied Physics;2024-01-24
2. Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs;Materials Science Forum;2023-05-31
3. Atomic scale localization of Kohn–Sham wavefunction at SiO2/4H–SiC interface under electric field, deviating from envelope function by effective mass approximation;Applied Physics Letters;2023-05-29
4. Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs;Japanese Journal of Applied Physics;2020-03-01
5. The intrinsic atomic-level surface roughness mobility limit of 4H-SiC;Journal of Applied Physics;2018-09-14
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