Electrical properties and modeling of ultrathin impurity-doped silicon dioxides
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1389079
Reference36 articles.
1. Preparation of Low-Dielectric-Constant F-DopedSiO2Films by Plasma-Enhanced Chemical Vapor Deposition
2. Material Properties of Spin‐on Silicon Oxide (SOX) for Fully Recessed NMOS Field Isolation
3. Fluorine‐Enhanced Oxidation of Silicon: Effects of Fluorine on Oxide Stress and Growth Kinetics
4. Hot-electron hardened Si-gate MOSFET utilizing F implantation
5. Improvement of SiO2/Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion
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