A study of preferential growth of carbon nanotubes with semiconducting behavior grown by plasma-enhanced chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3234389
Reference20 articles.
1. High-frequency performance projections for ballistic carbon-nanotube transistors
2. Electronic structure of chiral graphene tubules
3. Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method
4. On the Origin of Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes
5. Selective Etching of Metallic Carbon Nanotubes by Gas-Phase Reaction
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2. Numerical Simulation of Performance Metrics of Dual Metal Gate Carbon Nanotube Field Effect Transistor (DM-CNTFET) for Numerous Sensing Purposes;Materials Today: Proceedings;2023-07
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4. Exploration of Novel Hafnium Oxide (HfO2) Based Plasma-Assisted Gate All Around Carbon Nanotube FET (GAA-CNTFET) for High Sensing Applications;ECS Journal of Solid State Science and Technology;2022-10-01
5. Impact of PECVD characteristics on metrics of a Plasma-Assisted Vertically Aligned Carbon Nanotube FET (VA-CNTFET) device;2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience & Nanotechnology (5NANO);2022-04-28
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