Transfer and recombination mechanism of carriers in phase-separated InGaN quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4820395
Reference21 articles.
1. InGaN Single-Quantum-Well LEDs
2. Characteristics of InGaN laser diodes in the pure blue region
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4. High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
5. Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy
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3. Optical Properties of InGaN/GaN QW with the Same Well-Plus-Barrier Thickness;Crystals;2022-01-15
4. Luminescence measurement of band gap;Acta Physica Sinica;2022
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