Enhanced performance of solution-processed regioregular poly(3-hexylthiophene) thin-film transistors using planar bottom-contact architecture
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2745221
Reference18 articles.
1. Schottky gate static induction transistor using copper phthalocyanine films
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1. Organic Thin Film Transistors Incorporating Recessed Electrodes on Polymer Gate Dielectric;IEEE Electron Device Letters;2022-03
2. Two-dimensional MoS2-assisted immediate aggregation of poly-3-hexylthiophene with high mobility;Physical Chemistry Chemical Physics;2015
3. On the Relation between Morphology and FET Mobility of Poly(3-alkylthiophene)s at the Polymer/SiO2and Polymer/Air Interface;Advanced Functional Materials;2013-11-27
4. Effects of contact treatments on solution-processed n-type dicyano-ovalenediimide and its complementary circuits;RSC Advances;2013
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