Organic Thin Film Transistors Incorporating Recessed Electrodes on Polymer Gate Dielectric
Author:
Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai, India
2. Department of Chemistry, Indian Institute of Technology Madras, Chennai, India
Funder
Department of Science and Technology
Centre for NEMS and Nanophotonics (CNNP) in terms of providing Fabrication Facility
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9721042/09680697.pdf?arnumber=9680697
Reference43 articles.
1. Reduced contact resistance and highly stable operation in polymer thin-film transistor with aqueous MoOx solution contact treatment
2. Undoped polythiophene field-effect transistors with mobility of 1cm2V−1s−1
3. Controlling contact resistance in top-gate polythiophene-based field-effect transistors by molecular engineering
4. Fully Solution-Processed Flexible Organic Thin Film Transistor Arrays with High Mobility and Exceptional Uniformity
5. Organic thin film transistors: From theory to real devices
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1. Spice Simulation of Solution Processed Bottom Gate Bottom Contact Organic Thin Film Transistor;Springer Proceedings in Physics;2024
2. Microwave-Irradiated Metal-Oxide Thin-Film Transistors With Recessed Gate Structure and Their Applications in Logic Circuits;IEEE Transactions on Electron Devices;2023-01
3. Impact of polymer gate dielectric capacitance and gate leakage current on solution-based polymer organic thin film transistor;Materials Today: Proceedings;2023
4. Strategy from the Fabrication of Polymer Thin Film Transistor on Rigid and Flexible Substrate to LTspice Simulation Towards Circuit Applications;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11
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