Impact of aluminum nitride as an insulator on the performance of zinc oxide thin film transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2890034
Reference12 articles.
1. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
2. Theory of Fe, Co, Ni, Cu, and their complexes with hydrogen in ZnO
3. Hydrogen as a Cause of Doping in Zinc Oxide
4. Oxygen vacancies in ZnO
5. ZnO-channel thin-film transistors: Channel mobility
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