Temperature dependence of threshold of strained quantum well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104391
Reference10 articles.
1. Band-structure engineering for low-threshold high-efficiency semiconductor lasers
2. Ridge waveguide injection laser with a GaInAs strained‐layer quantum well (λ=1 μm)
3. Enhancement of modulation bandwidth in InGaAs strained‐layer single quantum well lasers
4. Extremely wide modulation bandwidth in a low threshold current strained quantum well laser
5. Linewidth enhancement factor in strained quantum well lasers
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