Scanning tunneling spectroscopy and Kelvin probe force microscopy investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces-Reference-Cited by-同舟云学术

Scanning tunneling spectroscopy and Kelvin probe force microscopy investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces

Published:2010-07-15 Issue:2 Volume:108 Page:023711
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Melitz Wilhelm,Shen Jian,Lee Sangyeob,Lee Joon Sung,Kummel Andrew C.,Droopad Ravi,Yu Edward T.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3462440

Reference44 articles.

1. Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric

2. Surface reconstructions for InAs(001) studied with density-functional theory and STM

3. Initial stages of the autocatalytic oxidation of the InAs(001)-(4×2)/c(8×2) surface by molecular oxygen

4. Real Space Surface Reconstructions of Decapped As-rich In0.53Ga0.47As(001)-(2×4)

5. Cross-Sectional Scanning Tunneling Microscopy

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