Influence of trench depth on the misfit dislocation density at strained epitaxial layer interfaces grown on patterned GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104862
Reference3 articles.
1. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
2. The isolation and nucleation of misfit dislocations in strained epitaxial layers grown on patterned, ion-damaged GaAs
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Misfit dislocation interactions observed by cathodoluminescence in InGaAs on off-cut, patterned GaAs;Journal of Applied Physics;2003-08
2. InGaAs layers of high quality grown on patterned GaAs substrates with trenches;Materials Science and Engineering: B;1999-12
3. Formation of segregated cell structure for MBE growth of mismatched semiconductors;Thin Solid Films;1997-09
4. Epitaxial lateral overgrowth of InGaAs on patterned GaAs substrates by liquid phase epitaxy;Journal of Crystal Growth;1996-12
5. Dynamical Formation Process of Pure Edge Misfit Dislocations at GaAs/Si Interfaces in Post-Annealing;Japanese Journal of Applied Physics;1994-09-15
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