InGaAs layers of high quality grown on patterned GaAs substrates with trenches
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Effect of Ampoule Rotation on Growth of InGaAs Ternary Bulk Crystals from Solution
2. InGaAs mixed crystals grown by the temperature-difference method and the numerical analysis of solution convection
3. Crystal Interfaces. Part II. Finite Overgrowths
4. Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures
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1. Composition Conversion Mechanism of InSb into InGaSb;Japanese Journal of Applied Physics;2003-01-15
2. Study of the formation mechanism of InGaAs pyramidal layers on GaAs(100) patterned substrates by LPE;Semiconductor Science and Technology;2002-06-18
3. A novel method to grow high quality In1−xGaxAs ELO and bridge layers with high indium compositions;Journal of Crystal Growth;2002-04
4. Influence of indium on the morphology of LPE grown InxGa1-xAs (x=0-0.06) epilayers on patterned GaAs(100) substrates;Journal of Materials Science Letters;2002
5. Optimization of circular trench geometry of GaAs(111)B substrates for growth of high quality InxGa1−xAs bridge layers;Journal of Crystal Growth;2001-07
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