Measuring depletion-layer capacitance to analyze a decrease in breakdown voltage of 4H-SiC diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4946889
Reference18 articles.
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1. Atomistic Mechanism of 4 H - SiC/SiO2 Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices;Physical Review Applied;2021-03-02
2. Study of mobile ionic charges by thermally stimulated currents in 4H-SiC MOS capacitors with thick SiO2 layers;Materials Science and Engineering: B;2021-01
3. Dependence of humidity-stress impact on passivation film for edge termination area in 4H-SiC diodes;Japanese Journal of Applied Physics;2020-09-25
4. Two Mechanisms of Charge Accumulation in Edge Termination of 4H-SiC Diodes Caused by High-Temperature Bias Stress and High-Temperature and High-Humidity Bias Stress;IEEE Transactions on Electron Devices;2018-08
5. Resistance of Pb0.99(Zr0.95Ti0.05)0.98Nb0.02O3 under high voltage microsecond pulse induced breakdown;Acta Physica Sinica;2017
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