In situ observation of vacancy dynamics during resistance changes of oxide devices-Reference-Cited by-同舟云学术

In situ observation of vacancy dynamics during resistance changes of oxide devices

Published:2011-09 Issue:5 Volume:110 Page:056106
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Choi Sang-Jun,Park Gyeong-Su,Kim Ki-Hong,Yang Woo-Young,Bae Hyung-Jin,Lee Kyung-Jin,Lee Hyung-ik,Park Seong Yong,Heo Sung,Shin Hyun-Joon,Lee Sangbin,Cho Soohaeng

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3626816

Reference14 articles.

1. Resistive switching in transition metal oxides

2. Nonvolatile Memory with Multilevel Switching: A Basic Model

3. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

4. Improved Switching Uniformity and Speed in Filament-Type RRAM Using Lightning Rod Effect

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