Controllable modulation of the oxygen vacancy-induced adjustment of memristive behavior for direct differential operation with transistor-free memristor-Reference-Cited by-同舟云学术

Controllable modulation of the oxygen vacancy-induced adjustment of memristive behavior for direct differential operation with transistor-free memristor

Published:2023 Issue:34 Volume:15 Page:14257-14265
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Xie Qin¹,Pan Xinqiang¹²^ORCID,Luo Wenbo¹²,Shuai Yao¹²,Zeng Huizhong¹,Wang Jiejun¹,Liu Yuting¹,Yang Xudong¹,Lv Lu¹,Xu Jiaqi¹,Yan Hao²,Wu Chuangui¹²,Zhang Wanli¹²

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China

2. Chongqing Institute of Microelectronics Industry Technology, UESTC, Chongqing 401332, P. R. China

Abstract

Based on a novel differential pair consisting of two memristors (with opposite memristive behavior directions), which were realized by the modulation of oxygen vacancies, differential operation was implemented without subtraction circuits.

Funder

Natural Science Foundation of Chongqing

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR02395H

Reference43 articles.

1. Experimental Demonstration of Feature Extraction and Dimensionality Reduction Using Memristor Networks

2. Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar

3. Neuro-Inspired Computing With Emerging Nonvolatile Memorys

4. Fully hardware-implemented memristor convolutional neural network

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