Electro‐optic properties of reverse‐biased GaAs epitaxial thin films at 10.6 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654950
Reference11 articles.
1. Electro-Optic and Waveguide Properties of Reverse-Biased Gallium Phosphidep−nJunctions
2. Efficient GaAs–AlxGa1−xAs Double‐Heterostructure Light Modulators
3. Reverse‐Biased Gallium Phosphide Diodes as High‐Frequency Light Modulators
4. Reverse‐Biased Gallium Phosphide Diodes as High‐Frequency Light Modulators
5. OBSERVATION OF PROPAGATION CUTOFF AND ITS CONTROL IN THIN OPTICAL WAVEGUIDES
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2. Very low-loss GaInAs/InP optical waveguides for the 10.6μm wavelength;Electronics Letters;1987
3. GaAs- and InP-based optical waveguides for the 10.6-μm wavelength;Topical Meeting on Integrated and Guided-Wave Optics;1986
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