InAsSb-based heterostructures for infrared light modulation
Author:
Affiliation:
1. Department of ECE, Stony Brook University, Stony Brook, New York 11794, USA
2. US Army Combat Capabilities Command, Army Research Laboratory, Adelphi, Maryland 20783, USA
Funder
Army Research Office
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5111980
Reference19 articles.
1. Fundamentals of Photonics
2. ELECTRO‐OPTIC CHARACTERISTICS OF CdTe AT 3.39 AND 10.6μ
3. Electro‐optic properties of reverse‐biased GaAs epitaxial thin films at 10.6 μm
4. Investigation of the depletion-modulation characteristics of low-power 10.6-/spl mu/m IR modulators based on the resonant plasma effect
5. Acoustooptic figure of merit for single crystal germanium at 106-μm wavelength
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1. g -factor engineering with InAsSb alloys toward zero band gap limit;Physical Review B;2023-09-06
2. Review of virtual substrate technologies for 6.3 Ångström lattice constants;Journal of Vacuum Science & Technology A;2023-06-21
3. Perspective on advances in InAsSb type II superlattices grown on virtual substrates;Applied Physics Letters;2020-12-21
4. Electrical modulation of the LWIR absorption and refractive index in InAsSb-based strained layer superlattice heterostructures;Journal of Applied Physics;2020-08-28
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