Cavity-enhanced photoluminescence of SiGe/Si multiquantum wells grown on silicon-on-insulator substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1707203
Reference13 articles.
1. Silicon-based semiconductor heterostructures: column IV bandgap engineering
2. Band edge and deep level photoluminescence of fully strained Si1−xGex/Si alloys
3. Photoluminescence from electron‐hole plasmas confined in Si/Si1−xGex/Si quantum wells
4. Photoluminescence of Si-rich Si-Ge alloys
5. Well-resolved band-edge photoluminescence of excitons confined in strainedSi1−xGexquantum wells
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1. Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography;Nanoscale Research Letters;2013-08-08
2. Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material;Chinese Physics B;2011-10
3. Formation of a resonant microcavity in hydrogen ion-implanted silicon-on-insulator structures;Journal of Applied Physics;2007-10
4. Considerations for interpretation of luminescence from silicon-on-insulator light emitting structures;Semiconductor Science and Technology;2007-09-05
5. Wavelength-selective enhancement of the intensity of visible photoluminescence in hydrogen-ion-implanted silicon-on-insulator structures annealed under high pressure;Applied Physics Letters;2006-07-03
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